Portus RF essentialis ad gradum tabulae pro electronicis densis: portae IoT, rūtōrēs sine fīlō, cellulae parvae et tabulae experīmentālis






Conductor medius |
Beryllium Cuprum, aurum plating |
Insulatora |
PTFE |
Corpus |
Aes, Aurum Plating |
Impedantia |
50 ohm |
Frequentia Band |
DC ad VIII GHz |
VSWR |
1.2 max |
Dieelectric voltage sustinere |
1000V |
contactus Resistentiæ |
Centrum Conductor ≤3mΩ Conductor exterus ≤2 mΩ
|
resistens Insulationis |
≥5000MΩ |


Metri Performance |
Conector communis |
Conector altissimae efficaciae |
Augere rationem |
Amissio insertionis |
>0,5 dB |
<0,1 dB |
↑80% |
Rapportus Tensionis Undae Stantis (VSWR) |
>1.5 |
≤1.20 |
↑20% |
Distorsio signi |
Manifesta |
Minimus |
↑90% |
Tenuis Signi |
Attenuatio gravis |
Fere nulla attenuatio |
>95% |
Qualitas communicationis |
Instabilis |
Stabilitas et fiducia |
↑ |








