Adaptātor lātēbandī DC–12 GHz, 4.3/10, 90°, femīneus ad māsculīnum, pro īnfrāstructūrā 5G


Conductor medius |
Aes, argentum in superficie depōnendum |
Forficula |
Aes phosphoricum, argentum in superficie depōnendum |
Insulatora |
PTFE |
Corpus |
Aes, Ternary mixtura plating |
Copulatio Nucis |
Aes, Nickel plating |
Digitus contactus |
Aes phosphoricum, argentum in superficie depōnendum |
C'ring |
Acer inox, passivatum |
Gasket |
SIlicone rubber |
Impedantia |
50 ohm |
Frequentia Band |
Directa ad 12 GHz |
VSWR |
1,2 maxime apud directam ~6 GHz |
IDM3 |
≤−163 dBc (2 × 43 dBm) |
Dieelectric voltage sustinere |
2500V |
resistentia contactus |
Conductor Centralis ≤1 mΩ Conductor Externus ≤1 mΩ
|
resistens Insulationis |
≥5000 MΩ |
Durabilitas |
≥500 |









